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| Joined: | Mon Nov 21st, 2005 |
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Multi-level Phase Change Memory Breakthrough
To achieve this breakthrough demonstration, IBM scientists in Zurich used advanced modulation coding techniques to mitigate the problem of short-term drift in multi-bit PCM, which causes the stored resistance levels to shift over time, which in turn creates read errors. Up to now, reliable retention of data has only been shown for single bit-per-cell PCM, whereas no such results on multi-bit PCM have been reported.